描述
5SHY3545L0009 ABB 可控硅IGCT模塊
型號:5SHY3545L0009
名稱:可控硅IGCT模塊
品牌:ABB
產品凈深度/長度:234毫米
產品凈高度:27毫米
產品凈寬度:112.5毫米產品凈重:0.4公斤
供應進口原裝正品,專業(yè)停產配件;發(fā)貨快,貨期精準,一手貨源,現(xiàn)貨庫存超過1億
可控硅5SHY3545L0009 IGCT功率模塊ABB工控應用行業(yè)
5SHY3545L0009? 集成門極換流晶閘管(IntergratedGateCommutatedThyristors),它是將GTO芯片與反并聯(lián)二極管和門極驅動電路集成在一起,再與其門極驅動器在外圍以低電感方式連接而成。也就是門極集成化的GTO(Gate Turn Off)。
IGCT在整流環(huán)節(jié)中與SCR一脈相承,SCR是Silicon Controlled Rectifier的縮寫,5SHY3545L0009是可控硅整流器的簡稱??煽毓栌袉蜗?、雙向、可關斷和光控幾種類型。它具有體積小、重量輕、效率高、壽命長、控制方便等優(yōu)點,被廣泛用于可控整流、調壓、逆變以及無觸點開關等各種自動控制和大功率的電能轉換的場合。
單向可控硅是一種可控整流電子元件,能在外部控制信號作用下由關斷變?yōu)閷ǎ坏?,外部信號就無法使其關斷,只能靠去除負載或降低其兩端電壓使其關斷。單向可控硅是由三個PN結PNPN組成的四層三端半導體器件,與具有一個PN結的二極管相比,單向可控硅正向導通受控制極電流控制;與具有兩個PN結的三極管相比,差別在于可控硅對控制極電流沒有放大作用。雙向可控硅具有兩個方向輪流導通、關斷的特性。雙向可控硅實質上是兩個反并聯(lián)的單向可控硅,是由NPNPN五層半導體形成四個PN結構成、有三個電極的半導體器件。由于主電極的構造是對稱的(都從N層引出),所以它的電極不像單向可控硅那樣分別叫陽極和陰極,而是把與控制極相近的叫做第一電極A1,另一個叫做第二電極A2。雙向可控硅的主要缺點是承受電壓上升率的能力較低。這是因為雙向可控硅在一個方向導通結束時,硅片在各層中的載流子還沒有回到截止狀態(tài)的位置,必須采取相應的保護措施。雙向可控硅元件主要用于交流控制電路,如溫度控制、燈光控制、防爆交流開關以及直流電機調速和換向等電路。可控硅在維持電流以上一直處于開通狀態(tài),關斷電流高,控制困難,關斷速度較慢。逆變環(huán)節(jié)中,在LCI(負載換相逆變器)中SCR具有優(yōu)異表現(xiàn),可做到超大功率,電壓高、電流也大。二極管(Diode,不可控整流器件)和SCR(半可控)整流均不需要PMW即可滿足兩象限變頻器工作,PWM需要用IGBT(全控)等器件。
Unidirectional SCR is a kind of controllable rectifier electronic component, which can be turned on from off to on under the action of external control signals. But once it is turned on, the external signal cannot make it off. It can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional SCR is a four-layer three-terminal semiconductor device composed of three PN junction PNPN. Compared with the diode with one PN junction, unidirectional SCR is controlled by the current of the control pole. Compared with the transistor with two PN junction, the difference is that the SCR does not magnify the current of the control pole. Bidirectional SCR has the characteristics of turning on and off in two directions. Bidirectional SCR is essentially two one-way SCR in inverse parallel. It is a semiconductor device consisting of four PN structures formed by five layers of NPNPN semiconductor and has three electrodes. Because the structure of the main electrode is symmetrical (both lead from the N layer), its electrodes are not called anode and cathode as unidirectional SCR, but the first electrode A1, which is very close to the control, is called the second electrode A2. The main disadvantage of bidirectional SCR is its low ability to withstand the voltage rise rate. This is because when the bidirectional SCR is switched on in one direction, the carriers in the silicon wafer in each layer have not returned to the cut-off position, and corresponding protection measures must be taken. Bidirectional SCR is mainly used in AC control circuit, such as temperature control, lighting control, explosion-proof AC switch and DC motor speed control and reversing circuit. SCR is always in the open state above the maintenance current, with high turn-off current, difficult control and slow turn-off speed. In the inverter link, SCR has excellent performance in LCI (load commutator inverter), which can achieve super power, high voltage and large current. Diode (uncontrolled rectifier) and SCR (semi-controlled) rectifier do not require PMW to work with two-quadrant converters, while PWM requires devices such as IGBT (full control).