5SHY3545L0005 ABB 可控硅

ABB風(fēng)電IGCT可控硅5SHY35L4510 5SHY3545L0003 5SHY3545L0005

關(guān)鍵要求是保持當(dāng)前的外部尺寸，以便與應(yīng)用和集成門單元兼容。

擴(kuò)展現(xiàn)有RC-IGCT平臺的潛力包括:

通過有效利用原始硅晶片增加器件直徑。

最小柵極電路阻抗–通過在器件外圍使用柵極觸點基礎(chǔ)設(shè)施，并通過外殼對柵極觸點進(jìn)行布線來實現(xiàn)。

通過將柵極觸點移至外圍來改善冷卻——現(xiàn)在不再需要用于傳輸柵極信號的極片溝槽。

通過調(diào)整HPT+平臺增加最大可控電流[2]。

通過提高生產(chǎn)線的相應(yīng)能力，設(shè)備尺寸從91毫米增加到94毫米，相當(dāng)于增加了7%的面積。

通過改進(jìn)外殼壁的厚度公差，可以在不改變外殼外部尺寸的情況下適應(yīng)更大的晶片直徑。如圖1所示，如果其他條件保持不變，通過徑向向外移動?xùn)艠O觸點，其面積消耗會增加。為了抵消這種影響，設(shè)備的對中公差降低了50%以上。

這導(dǎo)致可用于執(zhí)行設(shè)備功能的有效面積增加了21%。額外的面積完全給了二極管，而IGCT面積比現(xiàn)有平臺略小。

為了關(guān)斷大電流，IGCT非常依賴于低門電路雜散阻抗。電感阻抗有三個貢獻(xiàn)者:晶片、套管和門單元。與襯套相比，晶片和澆口單元的貢獻(xiàn)較低。有了容納外圍柵極的新平臺，可以通過使柵極和陰極導(dǎo)體彼此靠近來減少柵極和陰極的分離，如圖2所示。

電子郵件:sales@runshengdcs.com

2970592941@qq.com

電話:+86 15383419322

銷售:曹經(jīng)理

我們的產(chǎn)品保修1年，有新的原廠停產(chǎn)和進(jìn)口備件。

官網(wǎng)所列價格以聯(lián)系方式確認(rèn)為準(zhǔn):曹經(jīng)理

我們的產(chǎn)品:全新原裝包裝

我們的保證:所有新的或修理過的零件都有12個月的保修期

我方付款方式:100%電匯庫存物品發(fā)貨前，可提出條件!

如果您有任何無法找到的停機(jī)備件，請隨時打電話或使用電子郵件與我聯(lián)系。

如果有產(chǎn)品無法解決的問題，請聯(lián)系我。產(chǎn)品價格可以協(xié)商。請聯(lián)系我!

 

Expedited shipping available

Reliance Electric AC Drive Model 6MDDN-2P3101
Expedited shipping available

reliance electric flexpak 3000 75/150 HP DC DRIVE

RELIANCE ELECTRIC KP-H330 BLOWER 1/10HP

RELIANCE ELECTRIC PATCH

RELIANCE ELECTRIC GV6000 AC DRIVE 7.5HP

Reliance Electric Output Module 57C403

Reliance Electric VTAC 7 HVAC DRIVE

RELIANCE ELECTRIC CALIBRE 13.5 HP ELECTRIC MOTOR

**NIB** Reliance Electric Analog Input 61C542A
Expedited shipping available

RELIANCE ELECTRIC 69932-218 CAPACITOR LOT OF 6

Reliance Electric SP500 VS AC Drive 1 HP 230V…

Reliance Electric 5-24 VDC Output Module 57C420

RELIANCE ELECTRIC 418285-113A PSBD-4A CONTROL BOARD NEW

Enlarge
RELIANCE ELECTRIC 418283-81A TRBD-1 CONTROL BOARD NEW

Enlarge
Reliance Electric 0-52806-1 TLOB Tach Loss Overspeed

RELIANCE ELECTRIC 418285-112A VCRB-1A CONTROL BOARD NEW

Highest Power Density for Most Compact Equipment

With the introduction of its latest Reverse-Conducting Integrated Gate Commuted Thyristors platform(RC-IGCT),ABB sets a new benchmark in high power semiconductor device performance.The initial RC-IGCT release is a 4500 V,3600 A device.Available in variants optimized for medium switching frequency applications found with 3-level topologies,and for low switching frequency used in Multi-Level Modular Converters(MMC).The repetitive turn-OFF current of 3600 A is a record value in its class.

For the converter manufacturer,it means a significantly compact converter design than previously.The device can be used in many applications including medium voltage drive(MVD),power grid compensators,wind,rail-intertie and shore-to-ship.

Introduction

The advance in power conversion towards high power and high current,driven by renewable energy,grid stability and industrial drives,calls for compact power semiconductors with high current capability,low losses and high reliability.IGCT,compared to the ever-maturing IGBT technology,offers the following advantages:

Low ON-state voltage,leading to lower total losses

High current capability without paralleling

Inherent ability to withstand large fault currents without rupturing

Potential for stable short-circuit failure mode after failure

For this inverter type,the IGCT’s low loss advantage was quantified in[1].Depending on the inverter mode,the losses are 10–15 percent lower using IGCTs than IGBTs.

This new IGCT platform is the culmination of some 20 years of continuous development.